Raman scattering near a quantum critical point
Freericks, J. K. · Devereaux, T. P.
Original · EN
Electronic Raman scattering experiments in a wide variety of materials (ranging from mixed-valence materials to Kondo insulators to high-temperature superconductors) show anomalous behavior in the B₁g channel when the system is on the insulating side of the metal-insulator transition. Here we provide an exact solution for B₁g Raman scattering in the Falicov-Kimball model, show how these theoretical results are universal near the metal-insulator transition and show how they produce the two main features seen in experiments near a quantum critical point: (i) the rapid appearance of low-energy spectral weight as T is increased from 0 and (ii) the existence of an isosbestic point (where the Raman response is independent of T at a characteristic frequency).
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