Spin injection and detection by resonant tunneling structure
Glazov, M. M. · Tarasenko, S. A. · Alekseev, P. S. · Odnoblyudov, M. A. · Chistyakov, V. M. · Yassievich, I. N.
Original · EN
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level.
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