Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals
Racka, K. · Kuryliszyn, I. · Arciszewska, M. · Dobrowolski, W. · Broto, J. -M. · Goiran, M. · Portugall, O. · Rakoto, H. · Raquet, B. · Dugaev, V. · Slynko, E. I. · Slynko, V. E.
Original · EN
The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign.
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