Evidence For Heavy Hole and Light Hole Current Separation in P-Type Resonant Tunneling Diodes With Prewells
Lewis, R. M. · Wei, H. P. · Lin, S. Y. · Klem, J. F.
Original · EN
We investigate the transport of holes through AlAs/In.₁₀Ga.₉₀As resonant tunneling diodes which utilize InₓGa₁₋ₓAs prewells in the emitter with x=0,.10, and.20. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localiz- ation) of charges in the prewell and the formation of direct heavy(light) hole to heavy(light) hole conduction channels as a consequence.
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