Detecting percolative metal-insulator transition in manganites by resistive relaxation
Chen, X. J. · Habermeier, H. -U. · Almasan, C. C.
Original · EN
We report an experimental study of the time dependence of resistivity of a La₀.₉Sr₀.₁MnO₃ ultrathin film in order to elucidate the underlying mechanism for metal-insulator transition and colossal magnetoresistance CMR effect. There is a clear change of sign in the resistive relaxation rate across the metal-insulator transition driven by temperature or magnetic field. When measuring in increasing temperature or decreasing magnetic field, the resistivity increases with time in the metallic state but decreases with time in the insulating state. These relaxation processes indicate that the metal-insulator transition and the associated CMR are a direct result of phase separation and of percolation of the metallic phase.
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