1-D Simulation of the Electron Density Distribution in a Novel Nonvolatile Resistive Random Access Memory Device

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The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's equation and the transport equation for electrons assuming a Drift-Diffusion transport mechanism. Special emphasis is put on the screening of the spontaneous polarization by conduction electrons as a function of the applied voltage. Depending on the orientation of the polarization in the ferroelectric layer, a high and a low resistive state are found giving rise to a hysteretic I-V characteristic. The Rₕigh to Rₗow ratio ranging from > 50% to several orders of magnitude is calculated as a function of the dopant content.