Impurity potential fluctuations for selectively doped p-Ge/Ge₁₋ₓSiₓ heterostructures in the quantum Hall regime
Arapov, Yu. G. · Kuznetsov, O. A. · Neverov, V. N. · Harus, G. I. · Shelushinina, N. G. · Yakunin, M. V.
Original · EN
Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models.
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