Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire

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This work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Alₓ Ga₁₋ₓ As quantum well wire. The results show that the binding energy at a low temperature of 100 K is increased by about 11% over that associated with nearly room temperature, 300 K, and is also increased by about 23% over that associated with temperature of 500 K.