Monopolar Optical Orientation of Electronic Spins in Semiconductors
Tarasenko, S. A. · Ivchenko, E. L. · Bel'kov, V. V. · Ganichev, S. D. · Schowalter, D. · Schneider, Petra · Sollinger, M. · Prettl, W. · Ustinov, V. M. · Zhukov, A. E. · Vorobjev, L. E.
Original · EN
It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic and the circular photogalvanic effects. The monopolar spin orientation in n-type materials is shown to be possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.
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