Microwave Rectification at the Boundary between Two-Dimensional Electron Systems
Hoxha, I. · Vitkalov, S. A. · Zimbovskaya, N. A. · Sarachik, M. P. · Klapwijk, T. M.
Original · EN
Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage Vdc is generated whenever the electron densities n₁,₂ of the two metals are different, changing polarity at n₁ ≈ n₂. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.
English translation
This paper has no Arabic translation yet. Be the first: it takes a few seconds, and the result is stored for every future reader.