Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

Dolgopolov, V. T.; Deviatov, E. V.; Shashkin, A. A.; Wieser, U.; Kunze, U.; Abstreiter, G.; Brunner, K.

doi:10.1016/j.spmi.2004.02.003

arXiv 2003-10-06 DOI 10.1016/j.spmi.2004.02.003 0 views

Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

Dolgopolov, V. T. · Deviatov, E. V. · Shashkin, A. A. · Wieser, U. · Kunze, U. · Abstreiter, G. · Brunner, K.

Strongly Correlated Electrons

Original · EN

The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.

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