Thermopower in p-type GaAs/AlGaAs layers
Tsaousidou, M. · Butcher, P. N. · Crump, P. A. · Hyndman, R. J. · Gallagher, B. L.
Original · EN
We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion Sᵈ and the phonon-drag Sᵍ contributions to the thermopower. We find that Sᵈ is significant for temperatures up to 0.3K while at higher temperatures Sᵍ dominates. The calculated and measured Sᵍ agree very well with no adjustable parameters.
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