Unusual valence, negative charge-transfer gaps and self-doping in transition-metal compounds

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In this paper I discuss the electronic structure and properties of a specific, rather unconventional class of transition metal (TM) compounds, e.g. TM oxides, which formally have unusually high values of the oxidation state, or valence, of TM. In contrast to the typical situation, in this case the charge-transfer gap (excitation energy for the transfer of electrons from the ligands to the TM) is very small and may even become negative. As a result a profound modification of an electronic structure and of all the properties may take place: there appear holes in the oxygen p-bands (``self-doping''); the material may become the metal of a specific type; there may occur insulator--metal transitions of a specific type; magnetic properties may be quite different from the ones expected normally; the character of elementary excitations may change drastically. I give general discussion of such situation and consider several examples of corresponding systems and their specific properties.