The Hall effect and hole densities in high Tc GaMnAs thin films
Edmonds, K. W. · Wang, K. Y. · Campion, R. P. · Neumann, A. C. · Foxon, C. T. · Gallagher, B. L. · Main, P. C.
Original · EN
By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0x10-27 m-3 when Tc=125K for x=0.06. This data allows the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates Tc at large x and underestimates TC at low x.
English translation
This paper has no Arabic translation yet. Be the first: it takes a few seconds, and the result is stored for every future reader.