Diagnosis of transport properties in Ferromagnets
Arulsamy, Andrew Das
Original · EN
The resistivity model as a function of temperature and ionization energy (doping) is derived with further confinements from spin-disorder scattering in ferromagnetic phase. Magnetization and polaronic effects capture the mechanism of both spin independent and spin-assisted charge transport of ferromagnets, including the newly reported MnₓGe₁₋ₓ ferromagnetic semiconductor. The computed Tcrossover below TC and carrier density in Ga₁₋ₓMnₓAs system are 8-12 K and 10¹⁹ cm⁻³, remarkably identical with the experimental values of 10-12 K and 10¹⁸-10²⁰ cm⁻³ respectively. The calculated charge carriers density for MnₓGe₁₋ₓ is 10¹⁹ cm⁻³, which is also in the same order with the experimental values.
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