On the Origin of Schottky Barriers in GaAs(110):Au contacts
Reusch, T. C. G. · Wenderoth, M. · Winking, L. · Quaas, N. · Ulbrich, R. G.
Original · EN
Scanning Tunnelling Spectroscopy of GaAs(110):Au Schottky contacts in cross-sectional configuration has been used to investigate the in-depth properties of the space charge layer as well as the interface region with nanometer resolution.
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