Resistivity model for both paramagnetic and ferromagnetic phases
Arulsamy, Andrew Das
Original · EN
The resistivity, ρ as a function of temperature and ionization energy (doping) and magnetization respectively is derived with further confinements from spin-disorder scattering. The computed Tcrossover below TC and carrier density in Ga₁₋ₓMnₓAs system are 8-12 K and 10¹⁹ cm⁻³, remarkably identical with the experimental values of 10-12 K and 10¹⁸-10²⁰ cm⁻³ respectively.
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